HIGH-SPEED 2.5V
IDT70T633/1S
Features
Full hardware support of semaphore signaling between
True Dual-Port memory cells which allow simultaneous
access of the same memory location
Fully asynchronous operation from either port
High-speed access
Separate byte controls for multiplexed bus and bus
– Commercial: 10/12/15ns (max.)
– Industrial: 10/12ns (max.)
Sleep Mode Inputs on both ports
RapidWrite Mode simplifies high-speed consecutive write
Supports JTAG features compliant to IEEE 1149.1 in
cycles
Dual chip enables allow for depth expansion without
Single 2.5V (±100mV) power supply for core
external logic
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
IDT70T633/1 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
Available in a 256-ball Ball Grid Array and 208-ball fine pitch
than one device
M/ S = V IH for BUSY output flag on Master,
Industrial temperature range (–40°C to +85°C) is available
M/ S = V IL for BUSY input on Slave
Busy and Interrupt Flags
Green parts available, see ordering information
On-chip port arbitration logic
512/256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
ports on-chip
matching compatibility
◆ BGA-208 and BGA-256 packages
power supply for I/Os and control signals on each port
◆ Ball Grid Array
◆ for selected speeds
Functional Block Diagram
U B L
LB L
R/ W L
UB R
LB R
R/ W R
B
E
B
E
B
E
B
E
C E 0L
0
L
1
L
1
R
0
R
C E 0R
CE 1L
OE L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
CE 1R
OE R
512/256K x 18
MEMORY
ARRAY
I/O 0L - I/O 17L
Din_L
Din_R
I/O 0R - I/O 17R
A 18L (1)
A 0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A 18R (1)
A 0R
TDI
TCK
C E 0L
CE 1L
OE L
R/ W L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE R
R/ W R
C E 0R
CE 1R
TDO
JTAG
TMS
T R ST
B U S Y L(2,3)
B U S Y R(2,3)
S EM L
INT L(3)
M/ S
SEM R
IN T R(3)
ZZ L
NOTES:
(4)
ZZ
CONTROL
ZZ R
(4)
1. Address A 18 x is a NC for IDT70T631.
LOGIC
2. BUSY is an input as a Slave (M/ S =V IL ) and an output when it is a Master (M/ S =V IH ).
5670 drw 01
3
BUSY and INT are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx, INT x, M/ S and the
sleep mode pins themselves (ZZx) are not affected during sleep mode.
1
?2012 Integrated Device Technology, Inc.
JUNE 2012
DSC-5670/9
相关PDF资料
IDT70T651S12DRI IC SRAM 9MBIT 12NS 208QFP
IDT70T653MS12BCI IC SRAM 18MBIT 12NS 256BGA
IDT70V05L55G IC SRAM 64KBIT 55NS 68PGA
IDT70V06L55G IC SRAM 128KBIT 55NS 68PGA
IDT70V07L35G IC SRAM 256KBIT 35NS 68PGA
IDT70V08S15PF IC SRAM 512KBIT 15NS 100TQFP
IDT70V09L20PFI IC SRAM 1MBIT 20NS 100TQFP
IDT70V18L20PFI IC SRAM 576KBIT 20NS 100TQFP
相关代理商/技术参数
IDT70T633S10BCI8 功能描述:IC SRAM 9MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T633S10BF 功能描述:IC SRAM 9MBIT 10NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T633S10BF8 功能描述:IC SRAM 9MBIT 10NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T633S10BFG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 10NS 208FPBGA
IDT70T633S10BFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 10NS 208FPBGA
IDT70T633S10BFI 功能描述:IC SRAM 9MBIT 10NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T633S10BFI8 功能描述:IC SRAM 9MBIT 10NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T633S10DD 功能描述:IC SRAM 9MBIT 10NS 144TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ